Machines for growing of indium (insb) and gallium atnimonide (gasb) monocrystals per Czochralski method CZ

To grow gallium antimonide (GaSb) and indium antimonide (InSb) monocrystals the Czochralski method is widely used. As long as growing process takes place in hydrogen, the facilities are equipped with hydrogen generators and palladium diaphragm-based hydrogen filters with maximal throughput capacity equal to 100 l/h.
 
The chamber has few separate inlets for inert gas (below) and hydrogen (above). Thermocouples are mounted on every line; an infrared pyrometer is installed in the center of the heater.
 
The gas system can automatically extract (deflate) gas from the chamber to ventilation system when the actual pressure exceeds the operating one (1.0 kgs/cm2). Apart from that, the chamber is equipped with the burst diaphragm in case of pressure surge.
 
Diameter of the growing monocrystal is defined via TV camera. The mass sensor controls the weigh of the growing crystal. 
The facility is equipped with the leak proof gas extraction system to relieve the gas from the chamber prior to any opening. 
The hardware is manufactured on request under approved Technical assignment. Any parameters can be changed at your convenience.

Benefits of machines for growing of gallium (GaSb) and indium antimonide (InSb) monocrystals produced by the “NPO “GKMP” LLC

• Automatic gas extraction (relief) from the chamber to ventilation system when the pressure exceeds the operating one.
• Burst diaphragm in case of pressure surge inside the chamber.
• Hydrogen generator and palladium diaphragm-based water filter.
• Leak proof gas extraction system to withdraw gases from chamber prior to every opening.

Property	Meaning
Crystal diameter, mm, not to exceed	150
Crystal length, mm, not to exceed	250
Crucible diameter, mm, not to exceed	230
Crucible capacity, kg, not to exceed	15
Speed travel speed, mm/min, growing	1.0-50.0
Speed travel speed, mm/min, set up	100
Seed rotation speed, rpm	1-50
Travel and seed rotation frequency tolerance, %	± 0.1
Rod stroke, mm	650
Crucible stroke, mm	200
Crucible travel speed, mm/min, set up	70
Crucible rotation frequency, rpm	1-20
Max. residual pressure mmHg (vacuum)	5.0•10-3
Cooling water flow rate, m3/h, not to exceed	5
Inlet cooling water pressure, MPa, no less	0.2
Argon flow rate, l/min, not to exceed	100
Hydrogen flow rate, l/min, not to exceed	100
Automated control system	Yes
Heating method	Resistive
Heater material	Graphite
Max. Heater temperature, ˚С	1200
Power: voltage, V frequency, Hz	Three-phase 380/220 50
Max. heater power, kWA not to exceed	40
Diameter * Height of the growing chamber, mm	410*850