Machines for growing of gallium (GaAs) and indium arsenides (InAs) monocrystals

LEC method is one of the key methods applied to produce gallium arsenide(GaAs) and indium arsenide (InAs) monocrystals. To prevent components from migration, the hot melt is covered with a low-melting flux with a density less than that of the melt itself. Additionally, the excess pressure of argon is created.
 
To create required thermal field and in order to control temperature gradients three heaters are embedded into machine. The main and the bottom heaters are stationary, and the upper one (background) is equipped with the motion drive.
 
Diameter of the crystal in process is defined with the help of the TV camera. The mass of the growing crystal is checked via mass sensor. Pyrometers can be mounted to control the temperature of heaters and/or hot melt when necessary.
 
The machine includes leak proof gas extraction system to withdraw gases from chamber prior to every opening. The vacuum chamber is designed to maintain vacuum and residual pressure up to 10 atm; along with the liquid encapsulation of the hot melt, the machine enables to grow gallium arsenide (GaAs)and indium arsenide (InAs)monocrystalswith the minimal diffusion of key components. 

The hardware is manufactured on request under approved Technical assignment. Any parameters can be changed at your convenience.
 

Benefits of machines for growing of gallium (GaAs) and indium arsenides (InAs) monocrystals produced by the “NPO “GKMP” LLC

• Stand alone control of heaters depending on power and temperature.
• Automatic gas extraction (relief) from the chamber to ventilation system, the pressure exceeds (10 kgs/cm2). The system is equipped with the burst diaphragm in case of pressure surge inside the chamber.
• Operating pressure equal to 10 atm.
• Leak proof gas extraction system to withdraw gases from chamber prior to every opening.

Property	Meaning
Crystal diameter, mm, not to exceed	155
Crystal length, mm, not to exceed	250
Crucible diameter, mm,not to exceed	230
Crucible capacity, kg, not to exceed	20
Speed travel speed, mm/min, growing	0.05-1.0
Speed travel speed, mm/min, set up	100
Seed rotation speed, rpm	1-30
Travel and seed rotation frequency tolerance, %	±0.1
Rod stroke, mm	600
Crucible stroke, mm	200
Crucible travel speed, mm/min	70
Crucible rotation frequency, rpm	1-20
Max. residual pressure mmHg (vacuum)	5.0•10-3
Cooling water flow rate, m3/h, not to exceed	5
Inlet cooling water pressure, MPa, no less	0.2
Argon flow rate, l/min, not to exceed	60
Automated control system	Yes
Power supply: voltage, V frequency, Hz	Three-phase 380/220 50
Max. power of the main heater, kWA not to exceed	60
Max. power of the bottom heater, kWA not to exceed	20
Max. power of the background heater, kWA not to exceed	20
Diameter * Height of the growing chamber, mm	410 * 850