Growth equipment

This facility is designed to grow silicon monocrystals using the hot melt. Such machines are used to grow silicon monocrystals of “sun” and semiconductor quality 75-300 mm in diameter. Embedded videosystem controls diameter of the monocrystal.

To educate students and perform scientific research small size and low power facilities are required. Such facilities can be easily placed in any laboratory.

This facility is designed to grow leucosapphire and ruby monocrystals of any crystallographic orientation, including the C-orientation (0001). A monocrystal is grown in a crucible, the form and dimensions of which shape those of the final crystal. The Bridgman-Stockbarger method is applied to grow crystals of any crystallographic axis resulting in better yield and reduced costs of further machining.

This facility is designed to grow leucosapphire monocrystals using the hot melt. Kyropoulous method is characterized by low temperature gradients while crystallization. The key benefits of this method are technical process simplicity that enables to grow large size crystals (>500kg) and low dislocation density.

This facility is designed to grow leucosapphire monocrystals of any crystallographic orientation of plates. This method enables to produce leucosapphire monocrystals of record dimensions impossible to obtain by other growing methods.

This facility is designed to melt, synthesize and grow gallium antimonide (GaSb) and indium antimonide (InSb) monocrystals per Czochralski method. The grown crystals are subsequently subject to annealing.