Growth equipment

Production of machines designed for crystal growing, like leucosapphires, are capable to produce crystals using methods of horizontal directional crystallization per Kyropoulos that enables to grow leucosapphirecrustal up to 30 kg.


The machine for silicon crystals per Czochralski method enables to grow crystals over 250 mm in diameter and 1600 mm long.


Apart from that, our company produces facilities to grow monocrystals from indium antimonide, as well as from indium and gallium arsenide. 
Place an order
Silicon crystal growing machine (per Czochralski method)
Silicon crystal growing machine (per Czochralski method)
Leucosapphire monocrystal growing machine (horizontally directed crystallization)
Leucosapphire monocrystal growing machine (horizontally directed crystallization)
Leucosapphire monocrystal growing machine (per Kyropoulous method)
Leucosapphire monocrystal growing machine (per Kyropoulous method)
1 / 3
Manufacture of specific vacuum furnaces exclusively for the needs of your production
Training of Customer’s staff
Commissioning and supervised mounting
Repair, maintenance and upgrade of existing thermal equipment
Machines for growing of silicon monocrystals per Czochralski method
This facility is designed to grow silicon monocrystals using the hot melt. Such machines are used to grow silicon monocrystals of “sun” and semiconductor quality 75-300 mm in diameter. Embedded videosystem controls diameter of the monocrystal.
Machines for growing of silicon monocrystals per Czochralski method
Machines for growing of silicon monocrystals per Czochralski method
Hardware for high education and research institutions
To educate students and perform scientific research small size and low power facilities are required. Such facilities can be easily placed in any laboratory.
Hardware for high education and research institutions
Hardware for high education and research institutions
Machines for growing of sapphire and ruby monocrystals per Bridgman-Stockbarger method
This facility is designed to grow leucosapphire and ruby monocrystals of any crystallographic orientation, including the C-orientation (0001). A monocrystal is grown in a crucible, the form and dimensions of which shape those of the final crystal. The Bridgman-Stockbarger method is applied to grow crystals of any crystallographic axis resulting in better yield and reduced costs of further machining.
Machines for growing of sapphire and ruby monocrystals per Bridgman-Stockbarger method
Machines for growing of sapphire and ruby monocrystals per Bridgman-Stockbarger method
Monocrystal leucosapphire growing facility per Kyropoulous method (Musatov, Goi)
This facility is designed to grow leucosapphire monocrystals using the hot melt. Kyropoulous method is characterized by low temperature gradients while crystallization. The key benefits of this method are technical process simplicity that enables to grow large size crystals (>500kg) and low dislocation density.
Monocrystal leucosapphire growing facility per Kyropoulous method (Musatov, Goi)
Monocrystal leucosapphire growing facility per Kyropoulous method (Musatov, Goi)
Machines for growingof leucosapphire monocrystal based on horizontally directed crystallization method
This facility is designed to grow leucosapphire monocrystals of any crystallographic orientation of plates. This method enables to produce leucosapphire monocrystals of record dimensions impossible to obtain by other growing methods.
Machines for growingof leucosapphire monocrystal based on horizontally directed crystallization method
Machines for growingof leucosapphire monocrystal based on horizontally directed crystallization method
Machines for growing of gallium (GaAs) and indium arsenides (InAs) monocrystals

This facility is designed to grow gallium arsenide (GaAs)and indium arsenide (InAs) monocrystals. The crystals are grown per Czochralski method with liquid encapsulation of the hot melt.

Machines for growing of gallium (GaAs) and indium arsenides (InAs) monocrystals
Machines for growing of gallium (GaAs) and indium arsenides (InAs) monocrystals
Machines for growing of indium (insb) and gallium atnimonide (gasb) monocrystals per Czochralski method CZ
This facility is designed to melt, synthesize and grow gallium antimonide (GaSb) and indium antimonide (InSb) monocrystals per Czochralski method. The grown crystals are subsequently subject to annealing.
Machines for growing of indium (insb) and gallium atnimonide (gasb) monocrystals per Czochralski method CZ
Machines for growing of indium (insb) and gallium atnimonide (gasb) monocrystals per Czochralski method CZ
Scope and applications:
Power electronics (PFC – Power Factor Converter), invertors and convertors for hybrid technologies, solar energy inventors
High frequency electronics
Optical and electronic devices
Microelectronics
Production of optics
Microwave microelectronics
Contact our expert for advice
We will provide comprehensive information regarding our production capacities, prepare a customized proposal for companies of small, average and large-scale industry, high-tech manufacturing, think tanks and laboratories.
We will find the best solution for any budget!
Order a callback
We will tell you in detail about our products, types and cost of delivery, we will prepare an individual offer for wholesale customers!