Si

Equipment for growing silicon crystals by the Czochralski method

Equipment for growing silicon crystals by the Czochralski method

Equipment for growing silicon crystals by the Czochralski methodPurpose:It is used for automatic production (except for seeding) of silicon single crystals with a diameter of up to 250 mm with a total length of up to 1600 mm by the Czochralski method from a crucible ø 508 mm. The most industrial techniques are called oriented crystal growth (Czochralski) as in this method a seed (a preoriented small crystal) initiates the growth in a predefined direction.

Parameter name

Value

Diameter, mm, no more 250
Hight, mm, no more 1600
Seeding speed, rpm 0,1 - 8,0
Seeding rotation speed, rpm 1,0- 30,0
Accuracy in maintaining the speed of movement and frequency of rotation of the seed,% > ±1
Movement of crucible, mm 400
Crucible speed, mm/min 0,01- 2,0
Crucible rotation speed, rpm 1,0- 20,0
Diameter of crucible, mm 508
Max.residual pressure, mmHg 5х10-3
Max. pumping speed, l/s 150
Cooling water consumption, m3 / h 10
Inlet cooling water pressure, MPa, not less 0,3
Argon consumption, l / h, no more 3600
Recommended inlet gaz pressure, M 0,25
Recommended compressed air pressure, MPa 0,6
Compressed air consumption per process, m3, no more 0,1

Power supply

voltage, V

frequency Hz

3х380+N

50

Max. power on the heater, kVA 150
Heater supply voltage, V 0 - 60
Dimensions, mm 4000х2700х6200
Weight, kg 6000

Documents

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