Equipment for growing silicon crystals by the Czochralski method

Si

Description Specifications

Purpose:It is used for automatic production (except for seeding) of silicon single crystals with a diameter of up to 250 mm with a total length of up to 1600 mm by the Czochralski method from a crucible ø 508 mm. The most industrial techniques are called oriented crystal growth (Czochralski) as in this method a seed (a preoriented small crystal) initiates the growth in a predefined direction.

Parameter name	Value
Diameter, mm, no more	250
Hight, mm, no more	1600
Seeding speed, rpm	0,1 - 8,0
Seeding rotation speed, rpm	1,0- 30,0
Accuracy in maintaining the speed of movement and frequency of rotation of the seed,%	> ±1
Movement of crucible, mm	400
Crucible speed, mm/min	0,01- 2,0
Crucible rotation speed, rpm	1,0- 20,0
Diameter of crucible, mm	508
Max.residual pressure, mmHg	5х10^-3
Max. pumping speed, l/s	150
Cooling water consumption, m³ / h	10
Inlet cooling water pressure, MPa, not less	0,3
Argon consumption, l / h, no more	3600
Recommended inlet gaz pressure, M	0,25
Recommended compressed air pressure, MPa	0,6
Compressed air consumption per process, m³, no more	0,1
Power supply voltage, V frequency Hz	3х380+N 50
Max. power on the heater, kVA	150
Heater supply voltage, V	0 - 60
Dimensions, mm	4000х2700х6200
Weight, kg	6000

Si

Equipment for growing silicon crystals by the Czochralski method

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