Equipment for growing silicon crystals by the Czochralski method
Equipment for growing silicon crystals by the Czochralski method

Parameter name |
Value |
Diameter, mm, no more | 250 |
Hight, mm, no more | 1600 |
Seeding speed, rpm | 0,1 - 8,0 |
Seeding rotation speed, rpm | 1,0- 30,0 |
Accuracy in maintaining the speed of movement and frequency of rotation of the seed,% | > ±1 |
Movement of crucible, mm | 400 |
Crucible speed, mm/min | 0,01- 2,0 |
Crucible rotation speed, rpm | 1,0- 20,0 |
Diameter of crucible, mm | 508 |
Max.residual pressure, mmHg | 5х10-3 |
Max. pumping speed, l/s | 150 |
Cooling water consumption, m3 / h | 10 |
Inlet cooling water pressure, MPa, not less | 0,3 |
Argon consumption, l / h, no more | 3600 |
Recommended inlet gaz pressure, M | 0,25 |
Recommended compressed air pressure, MPa | 0,6 |
Compressed air consumption per process, m3, no more | 0,1 |
Power supply voltage, V frequency Hz |
3х380+N 50 |
Max. power on the heater, kVA | 150 |
Heater supply voltage, V | 0 - 60 |
Dimensions, mm | 4000х2700х6200 |
Weight, kg | 6000 |
Documents
Ordering products/services
Получить консультацию
Подробно расскажем о наших товарах, видах и стоимости доставки,
подготовим индивидуальное предложение для оптовых клиентов!
Your name E-mail Phone
Your request
Задать вопрос
Подробно расскажем о наших товарах, видах и стоимости доставки,
подготовим индивидуальное предложение для оптовых клиентов!
Your name E-mail Phone
Your request
Sent