Silicon crystal growing machine (per Czochralski method)
Silicon crystal growing machine (per Czochralski method)
Application: to be used in automated production(except for things of silicon monocrystal substrate 250 mm diameter and total length of 1600 mm per Czochralski method using ø 508 mm crucible
| Diameter of crystal, mm, not to exceed |
250 |
| Length of crystal, mm, not to exceed |
1600 |
| Seed transferspeed, mm/min |
0.1 - 8.0 |
| Seed rotation speed, rpm/min |
1.0- 30.0 |
| Accuracy for maintaining transfer speed and rotation frequency of seed, % |
> ±1 |
| Crucible operating stroke, mm |
400 |
| Crucibletransferspeed, mm/min |
0.01- 2.0 |
| Crucible rotation frequency, rpm/min |
1.0- 20.0 |
| Crucible diameter, mm |
508 |
| Ultimate residual pressure, mmHg |
5*10-3 |
| Maximal pumping speed, l/s |
150 |
| Cooling water flowrate, m3/h |
10 |
| Cooling water input pressure, MPa, no less |
0,3 |
| Argon flow rate, l/h, not to exceed |
3600 |
| Recommended gas system inlet pressure, М |
0,25 |
| Recommended compressed air pressure, MPa |
0.6 |
| Compressed air flow rate per process, m3, not to exceed |
0.1 |
|
Power: Voltage,W Frequency, Hz |
3*380+N 50 |
| Maximal heater power, kw |
150 |
| Heater supply voltage, V |
0 - 60 |
| Overall dimensions, mm |
4000*2700*6200 |
| Mass, kg |
6000 |
Documents
Ordering products/services
Получить консультацию
Подробно расскажем о наших товарах, видах и стоимости доставки,
подготовим индивидуальное предложение для оптовых клиентов!
Задать вопрос
Подробно расскажем о наших товарах, видах и стоимости доставки,
подготовим индивидуальное предложение для оптовых клиентов!
Sent