Equipment for growing Indium Antimonide single crystal substrates

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Crystal growing machines

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Description Specifications

Purpose: It is used for melting, synthesizing and growing Indium Antimonide single crystal substrates with subsequent annealing of the grown crystal.

Parameter name	Value
Parameter name	Value
Max. dimensions of the crucible, mm: diameter height	135 70
Heating method	resistive
Heater material	graphite
	graphite
Heater height, mm	180
Maximum heater temperature, °С	1200
Temperature regulation precision, °С	0,1
Heating chamber environment: ultimate vacuum, mm Hg inert or hot gas flow, l / h	1*10^-5 1 - 100
Spinning speed of the upper crystal driver, rpm	0 - 50
Working movement speed of the upper crystal seed driver, mm/h	0 - 50
Movement speed of the upper crystal seed driver, mm/min	200
Crucible movement drive:
Crucible movement drive, mm	200
Spinning speed of the crucible driver, rpm	0 - 20
Power options: voltage, V frequency Hz	однофазный 50