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Equipment for growing Indium Antimonide single crystal substrates

Equipment for growing Indium Antimonide single crystal substrates

Description Specifications
Equipment for growing Indium Antimonide single crystal substratesPurpose: It is used for melting, synthesizing and growing Indium Antimonide single crystal substrates with subsequent annealing of the grown crystal.

Parameter name Value
Max. dimensions of the crucible, mm:
diameter height 		135
70
Heating method resistive
Heater material graphite
Heater height, mm 180
Maximum heater temperature, °С 1200
Temperature regulation precision, °С 0,1
Heating chamber environment:
ultimate vacuum, mm Hg
inert or hot gas flow, l / h 		1*10-5
1 - 100
Spinning speed of the upper crystal driver, rpm 0 - 50
Working movement speed of the upper crystal seed driver, mm/h 0 - 50
Movement speed of the upper crystal seed driver, mm/min 200
Crucible movement drive:
Crucible movement drive, mm 200
Spinning speed of the crucible driver, rpm 0 - 20
Power options:
voltage, V
frequency Hz 		однофазный
50

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