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Equipment for growing single crystals of gallium arsenide and indium
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Equipment for growing single crystals of gallium arsenide and indium
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INAS & GAAS
Equipment for growing single crystals of gallium arsenide and indium
Equipment for growing single crystals of gallium arsenide and indium
Description
Parameter name
Value
Max. dimensions of the crucible, mm:
diameter
height
230
200
Heating method
resistive
Heater material
graphite
Heater height, mm
400
Maximum heater temperature, °С
1400
Temperature regulation precision, °С
0,1
Heating chamber environment:
ultimate vacuum, mm Hg
inert gas extreme pressure, atm
1*10
-4
10 - 20
Spinning speed of the upper crystal driver, rpm
0 - 30
Working movement speed of the upper crystal seed driver, mm/min
0 - 0,5
Cruising movement speed of the upper crystal seed driver, mm/min
100
Crucible movement driver:
Working movement speed of the lower crystal seed driver, mm/min
0 - 0,5
Spinning speed of the crucible driver, rpm
0 - 20
Power movement speed of the lower crystal seed driver, mm/min
70
Upper area:
Temperature of the upper area heater, ˚С
1200
Electric capacity of the upper area heater, kW
20
Temperature maintenance precision
±0,1
Middle area:
Temperature of the heater, ˚С
1400
Electric capacity of the heater, kW, no more than
60
Temperature maintenance precision
±0,1
Lower area:
Temperature of the heater, ˚С
1200
Electric capacity of the heater, kW, no more than
20
Temperature maintenance precision
±0,1
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