Equipment for growing single crystals of gallium arsenide and indium

INAS & GAAS

Description

Equipment for growing single crystals of gallium arsenide and indium

Parameter name	Value
Parameter name	Value
Max. dimensions of the crucible, mm: diameter height	230 200
Heating method	resistive
Heater material	graphite
	graphite
Heater height, mm	400
Maximum heater temperature, °С	1400
Temperature regulation precision, °С	0,1
Heating chamber environment: ultimate vacuum, mm Hg inert gas extreme pressure, atm	1*10^-4 10 - 20
Spinning speed of the upper crystal driver, rpm	0 - 30
Working movement speed of the upper crystal seed driver, mm/min	0 - 0,5
Cruising movement speed of the upper crystal seed driver, mm/min	100
Crucible movement driver:
Working movement speed of the lower crystal seed driver, mm/min	0 - 0,5
Spinning speed of the crucible driver, rpm	0 - 20
Power movement speed of the lower crystal seed driver, mm/min	70
Upper area:
Temperature of the upper area heater, ˚С	1200
Electric capacity of the upper area heater, kW	20
Temperature maintenance precision	±0,1
Middle area:
Temperature of the heater, ˚С	1400
Electric capacity of the heater, kW, no more than	60
Temperature maintenance precision	±0,1
Lower area:
Temperature of the heater, ˚С	1200
Electric capacity of the heater, kW, no more than	20
Temperature maintenance precision	±0,1