Equipment for growing single crystals of gallium arsenide and indium
Equipment for growing single crystals of gallium arsenide and indium
Facilities designed to grow indium arsenide and gallium monocrystals for melting, synthesis and growing of indium arsenide and gallium monocrystals under pressure of inert gas with further annealing of the grown crystal.
Maximalcrucible dimensions, mm: diameter height |
230 200 |
Heating method |
resistive |
Heater material |
graphite |
Heater height, mm |
400 |
Maximal temperature, ˚С on the heater |
1400 |
Temperature regulating accuracy, ˚С |
0.1 |
Furnace medium: ultimate vacuum, mmHg inert or hot gas flow, l/h |
1*10-4 10-20 |
Upper rod rotation speed, rpm/min |
0 - 30 |
Upper rod drive rate (operating), mm/min |
0 - 0.5 |
Upper rod drive motion speed (inoperative), mm/min |
100 |
Lower rod drive motion speed, mm/min |
0 - 0.5 |
Crucible rotations speed, rpm/min |
0 - 20 |
Lower pin drive accelerated speed, mm/min |
70 |
Upper zone heater temperature ˚С |
1200 |
Upper heater power consumption rate, kW |
20 |
Temperature maintenance accuracy |
±0.1 |
Heater temperature, ˚С |
1400 |
Power consumption (not to exceed), kW |
60 |
Temperature maintenance accuracy |
±0.1 |
Heater temperature, ˚С |
1200 |
Power consumption, not to exceedнеболее, kW |
20 |
Temperature accuracy |
±0.1 |
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