INAS & GAAS

Equipment for growing single crystals of gallium arsenide and indium

Equipment for growing single crystals of gallium arsenide and indium

Equipment for growing single crystals of gallium arsenide and indium

Parameter name Value
Max. dimensions of the crucible, mm:
diameter
height
230
200
Heating method resistive
Heater material graphite
Heater height, mm 400
Maximum heater temperature, °С 1400
Temperature regulation precision, °С 0,1
Heating chamber environment:
ultimate vacuum, mm Hg
inert gas extreme pressure, atm
1*10-4
10 - 20
Spinning speed of the upper crystal driver, rpm 0 - 30
Working movement speed of the upper crystal seed driver, mm/min 0 - 0,5
Cruising movement speed of the upper crystal seed driver, mm/min 100
Crucible movement driver:
Working movement speed of the lower crystal seed driver, mm/min 0 - 0,5
Spinning speed of the crucible driver, rpm 0 - 20
Power movement speed of the lower crystal seed driver, mm/min 70
Upper area:
Temperature of the upper area heater, ˚С 1200
Electric capacity of the upper area heater, kW 20
Temperature maintenance precision ±0,1
Middle area:
Temperature of the heater, ˚С 1400
Electric capacity of the heater, kW, no more than 60
Temperature maintenance precision ±0,1
Lower area:
Temperature of the heater, ˚С 1200
Electric capacity of the heater, kW, no more than 20
Temperature maintenance precision ±0,1

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