INAS & GAAS

Equipment for growing single crystals of gallium arsenide and indium

Equipment for growing single crystals of gallium arsenide and indium

Equipment for growing single crystals of gallium arsenide and indium

Facilities designed to grow indium arsenide and gallium monocrystals for melting, synthesis and growing of indium arsenide and gallium monocrystals under pressure of inert gas with further annealing of the grown crystal.

Maximalcrucible dimensions, mm:

diameter

height

230

200

Heating method

resistive

Heater material

graphite

Heater height, mm

400

Maximal temperature, ˚С on the heater

1400

Temperature regulating accuracy, ˚С

0.1

Furnace medium:

ultimate vacuum, mmHg

inert or hot gas flow, l/h

1*10-4

10-20

Upper rod rotation speed, rpm/min

0 - 30

Upper rod drive rate (operating), mm/min

0 - 0.5

Upper rod drive motion speed (inoperative), mm/min

100

Lower rod drive motion speed, mm/min

0 - 0.5

Crucible rotations speed, rpm/min

0 - 20

Lower pin drive accelerated speed, mm/min

70

Upper zone heater temperature ˚С

1200

Upper heater power consumption rate, kW

20

Temperature maintenance accuracy

±0.1

Heater temperature, ˚С

1400

Power consumption (not to exceed), kW

60

Temperature maintenance accuracy

±0.1

Heater temperature, ˚С

1200

Power consumption, not to exceedнеболее, kW

20

Temperature accuracy

±0.1

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